Main Article Content
In this paper, using the recently introduced analytical approach for the analysis of mass and heat transfer during film growth in reactors for epitaxy from the gas phase, these processes are analyzed taking into account natural convection and possibility of changing the rate of chemical interaction between reagents. As a result of the analysis the conditions under which the homogeneity of the grown epitaxial layers increases with a change in the values of the parameters of the growth process were formulated. Another actual result of this paper is development of analytical approach for prognosis of mass and heat transport with account spatial and temporal dependences of parameters of considered processes and at the same time with account their nonlinearity.
Gusev VG, Yu. M. Gusev. Electronics. Moscow, Higher School; 1991.
Lachin VI, Savelov NS. Electronics. Rostov-on-Don, Phenics; 2001.
Vorob’ev AA, Korabl’ev VV, Yu. Karpov S. The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors. 2003;37(7):98.
Sorokin LM, Veselov NV, Shcheglov MP, Kalmykov AE, Sitnikova AA, Feoktistov NA, Osipov AV, Kukushkin SA. Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Technical Physics Letters. 2008;34(22):68.
Lundin VV, Sakharov AV, Zavarin EE, Sinitsin MA, Nikolaevв AE, Mikhailovsky GA, Brunkov PN, Goncharov VV, Ya. Ber B, Yu. Kazantsev D, Tsatsul’nikov AF. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers. Semiconductors. 2009;43(7):996.
Bravo-García YE, Rodríguez-Fragoso P, Mendoza-Alvarez JG, Gonzalezdela Cruz G. Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy. Mat. Sci. Sem. Proc. 2015;40:253-256.
Li Y, Antonuk LE, El-Mohri Y, Zhao Q, Du H, Sawant A, Yi Wang. J. Appl. Phys. 2006;99(6):064501.
Chakraborty A, Xing H, Craven MD, Keller S, Mates T, Speck JS, Den Baars SP, Mishra UK. Nonpolar α-plane p-type GaN and p-n-junction diodes. J. Appl. Phys. 2004;96(8):4494.
Carey VP. Liquid vapor phase change phenomena: an introduction to the thermophysics of vaporization and condensation processes in heat transfer equipment. CRC Press; 2018.
Mitsuhara M, Ogasawara M, Sugiura H. Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. J. Cryst. Growth. 1998;183:38.
Talalaev RA, Yakovleva EV, Yu. Karpova S, Yu. N. Makarov. On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds. J. Cryst. Growth. 2001;230:232.
Carslaw HS, Jaeger JC. Conduction of heat in solids. Oxford: At the Clarendon Press. 1964;488.
Yu. D. Sokolov. About the definition of dynamic forces in the mine lifting. Applied Mechanics. 1955;1(1):23-35.
Pankratov EL, Bulaeva EA. Micro and Nanosystems. 2016;8(1):52-64.
Pankratov EL, Bulaeva EA. Multidiscipline modeling in materials and structures. 2016;12(4):578-604.
Pankratov EL. Advanced Science, Engineering and Medicine. 2017;9(10):849-863.
Pankratov EL. Journal of Computational and Theoretical Nanoscience. 2017;14(10):4955-4963.
Pankratov EL, Bulaeva EA. Reviews in Theoretical Science. 2013;1(1):58-82.
Korn G, Korn T. Mathematical handbook for scientists and engineers. Definitions, theorems and formulas for reference and review. Second Edition. McGraw-Hill Book Company. New York; 1968.
Pankratov EL, Bulaeva EA. 3D research. 2015;6(4):46-56.
Pankratov EL, Bulaeva EA. Reviews in Theoretical Science. 2013;1(3):305-316.